Semiconductor 2N7002 SOT-23 MOSFET N-Channel Enhancement Mode Field Effect Transistor

• Encapsulation Structure: N-Channel Enhancement Mode Field Effect Transistor
• Application: Battery operated systems
• Certification: RoHS, CE, ISO, CCC
• Device marking code: MBR4045PT
• Delivery Time: 6~8weeks
• Average Rectified Output Current: 40A
• Model NO.: 2N7002 SOT-23
• Repetitive Peak Reverse Voltage: 45V
• Surge(Non-repetitive)Forward Current: 300A
• Storage Temperature: -55 ~ +150
• Junction Temperature: -55 ~ +150
• Grade: Industrial
• Type: N
• VDSS (V): 60
• ID (A): 0.34
• PD (W): 0.35
• Transport Package: 3000PCS
• Trademark: YANGJIE
• Origin: Made in China
• HS Code: 8542329000

Product Description

MOSFET
PartNumber:  2N7002 SOT-23 F2

Accept the sample request (About 2 weeks delivery time)

Delivery Time: 6~8weeks 


Product Summary
- VDS 60V
- ID 340mA
- RDS(ON)( at VGS=10V) <2.5ohm
- RDS(ON)( at VGS=4.5V) <3.0ohm


General Description
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
 

Applications
- Battery operated systems
- Solid-state relays
- Direct logic-level interface:TTL/CMOS

Datasheet